Backside Metal

Backside metallization used in HEMT production for power and RF applications demand high thermal conductivity and mechanical strength on thinned wafers. These high power, high frequency devices also need the highest reliability and yield due to the higher costs of GaN and GaAs. Via interconnect to the frontside means that conformal films with superior step coverage must be used to ensure a low resistance electrical path as well as being a heat dissipation film. Cost reductions have driven advancements in step coverage for these materials and the use of various metals. MacDermid Enthone’s gold, copper and silver products can meet all these criteria.